Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 20V
Switching Energy 380μJ (on), 160μJ (off)
Td (on/off) @ 25°C 40ns/91ns
Current - Collector Pulsed (Icm) 92A
Turn Off Time-Nom (toff) 300 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 12A
Test Condition 480V, 12A, 23 Ω, 15V
Collector Emitter Saturation Voltage 2.1V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 42 ns
Max Collector Current 23A
Collector Emitter Voltage (VCEO) 2.1V
Turn-Off Delay Time 91 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Max Power Dissipation 100W
Subcategory Insulated Gate BIP Transistors
Additional Feature ULTRA FAST SOFT RECOVERY
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Last Time Buy
Operating Temperature -55°C~150°C TJ