Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 20V
Switching Energy 630μJ (on), 1.39mJ (off)
Td (on/off) @ 25°C 42ns/230ns
Current - Collector Pulsed (Icm) 120A
Turn Off Time-Nom (toff) 620 ns
Continuous Collector Current 31A
Max Junction Temperature (Tj) 150°C
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 17A
Test Condition 480V, 17A, 23 Ω, 15V
Collector Emitter Saturation Voltage 1.99V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 42 ns
Max Collector Current 31A
Collector Emitter Voltage (VCEO) 600V
Turn-Off Delay Time 230 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Max Power Dissipation 100W
Subcategory Insulated Gate BIP Transistors
Additional Feature FAST SWITCHING, ULTRA FAST SOFT RECOVERY
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Last Time Buy
Operating Temperature -55°C~150°C TJ