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IRG4PC30FDPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT 600V 31A 100W TO247AC
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Buying Options
Total Price: USD $2.25
Unit Price: USD $2.248998
≥1 USD $2.248998
≥200 USD $0.870453
≥500 USD $0.840256
≥1000 USD $0.824501
Inventory: 9457
Minimum: 1
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Technical Details

Compliance

Lead Free Contains Lead, Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No

Dimensions

Width 5.3mm
Length 15.875mm
Height 24.99mm

Technical

Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 20V
Switching Energy 630μJ (on), 1.39mJ (off)
Td (on/off) @ 25°C 42ns/230ns
Current - Collector Pulsed (Icm) 120A
Gate Charge 51nC
Turn Off Time-Nom (toff) 620 ns
Continuous Collector Current 31A
Max Junction Temperature (Tj) 150°C
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 17A
Test Condition 480V, 17A, 23 Ω, 15V
Turn On Time 69 ns
Collector Emitter Saturation Voltage 1.99V
Collector Emitter Breakdown Voltage 600V
JEDEC-95 Code TO-247AC
Reverse Recovery Time 42 ns
Max Collector Current 31A
Collector Emitter Voltage (VCEO) 600V
Turn-Off Delay Time 230 ns
Polarity/Channel Type N-CHANNEL
Rise Time 26 ns
Transistor Application POWER CONTROL
Turn On Delay Time 42 ns
Input Type Standard
Case Connection COLLECTOR
Power Dissipation 100W
Element Configuration Single
Number of Elements 1
Current Rating 31A
Max Power Dissipation 100W
Voltage - Rated DC 600V
Subcategory Insulated Gate BIP Transistors
Additional Feature FAST SWITCHING, ULTRA FAST SOFT RECOVERY
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Last Time Buy
Published 2000
Packaging Bulk
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Weight 38.000013g
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole

Supply Chain

Factory Lead Time 14 Weeks

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