IRG4IBC30SPBF
RoHS
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Package TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 23.5A 45W TO220FP
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Buying Options
Total Price: USD $1.85
Unit Price: USD $1.84585
≥1 USD $1.84585
≥10 USD $1.5143
≥100 USD $1.4668
≥500 USD $1.42025
≥1000 USD $1.37275
Inventory: 1211
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 2.299997g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 45W
Terminal Position SINGLE
Current Rating 23.5A
Number of Elements 1
Element Configuration Dual
Power Dissipation 45W
Case Connection ISOLATED
Input Type Standard
Turn On Delay Time 22 ns
Transistor Application POWER CONTROL
Rise Time 19 ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 540 ns
Collector Emitter Voltage (VCEO) 1.6V
Max Collector Current 23.5A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.6V
Turn On Time 40 ns
Test Condition 480V, 18A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.6V @ 15V, 18A
Turn Off Time-Nom (toff) 1550 ns
Gate Charge 50nC
Current - Collector Pulsed (Icm) 47A
Td (on/off) @ 25°C 22ns/540ns
Switching Energy 260μJ (on), 3.45mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 590 ns
Dimensions
Height 16.12mm
Length 10.6172mm
Width 4.826mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Contains Lead, Lead Free
Alternative Model
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