Fall Time-Max (tf) 120 ns
Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 20V
Switching Energy 600μJ (on), 580μJ (off)
Td (on/off) @ 25°C 60ns/160ns
Current - Collector Pulsed (Icm) 34A
Turn Off Time-Nom (toff) 370 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 16A
Test Condition 480V, 16A, 23 Ω, 15V
Collector Emitter Saturation Voltage 2.7V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 42 ns
Max Collector Current 17A
Collector Emitter Voltage (VCEO) 2.7V
Turn-Off Delay Time 160 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Element Configuration Single
Max Power Dissipation 45W
Subcategory Insulated Gate BIP Transistors
Additional Feature ULTRA FAST SOFT RECOVERY
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Last Time Buy
Operating Temperature -55°C~150°C TJ