IRG4IBC20UDPBF
RoHS
/
Package TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 11.4A 34W TO220FP
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Buying Options
Total Price: USD $0.85
Unit Price: USD $0.8536
≥1 USD $0.8536
Inventory: 266713
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 4.826mm
Length 10.7442mm
Height 16.129mm
Technical
Fall Time-Max (tf) 170 ns
Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 20V
Switching Energy 160μJ (on), 130μJ (off)
Td (on/off) @ 25°C 39ns/93ns
Current - Collector Pulsed (Icm) 52A
Gate Charge 27nC
Turn Off Time-Nom (toff) 320 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 6.5A
Test Condition 480V, 6.5A, 50 Ω, 15V
Turn On Time 55 ns
Collector Emitter Saturation Voltage 2.1V
Collector Emitter Breakdown Voltage 600V
JEDEC-95 Code TO-220AB
Reverse Recovery Time 37 ns
Max Collector Current 11.4A
Collector Emitter Voltage (VCEO) 2.1V
Polarity/Channel Type N-CHANNEL
Rise Time 17 ns
Transistor Application POWER CONTROL
Input Type Standard
Case Connection ISOLATED
Power Dissipation 34W
Element Configuration Single
Number of Elements 1
Current Rating 11.4A
Max Power Dissipation 34W
Voltage - Rated DC 600V
Subcategory Insulated Gate BIP Transistors
ECCN Code EAR99
Termination Through Hole
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2003
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 2.299997g
Number of Pins 3
Package / Case TO-220-3 Full Pack
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 16 Weeks
Alternative Model
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