Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 20V
Switching Energy 250μJ (on), 640μJ (off)
Td (on/off) @ 25°C 43ns/240ns
Current - Collector Pulsed (Icm) 64A
Turn Off Time-Nom (toff) 610 ns
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 9A
Test Condition 480V, 9A, 50 Ω, 15V
Collector Emitter Saturation Voltage 2V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 37 ns
Max Collector Current 14.3A
Collector Emitter Voltage (VCEO) 2V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Element Configuration Single
Max Power Dissipation 34W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Last Time Buy
Operating Temperature -55°C~150°C TJ