Fall Time-Max (tf) 210 ns
Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 20V
Switching Energy 140μJ (on), 120μJ (off)
Td (on/off) @ 25°C 40ns/87ns
Current - Collector Pulsed (Icm) 27A
Turn Off Time-Nom (toff) 345 ns
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 5A
Test Condition 480V, 5A, 100 Ω, 15V
Collector Emitter Saturation Voltage 2.15V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 28 ns
Max Collector Current 6.8A
Collector Emitter Voltage (VCEO) 2.6V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Element Configuration Single
Max Power Dissipation 25W
Subcategory Insulated Gate BIP Transistors
Additional Feature ULTRA FAST
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Last Time Buy
Operating Temperature -55°C~150°C TJ