IRG4CC50UB
RoHS
/
Package Die
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT DIE
PDF
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Inventory: 2779
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Gate-Emitter Thr Voltage-Max 6V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 10A
Current - Collector (Ic) (Max) 55A
Voltage - Collector Emitter Breakdown (Max) 600V
Polarity/Channel Type N-CHANNEL
Input Type Standard
Configuration SINGLE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code O-XUUC-N
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form NO LEAD
Terminal Position UPPER
Subcategory Insulated Gate BIP Transistors
Additional Feature ULTRA FAST SPEED
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e0
Published 2017
Packaging Bulk
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case Die
Mounting Type Through Hole
Alternative Model
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