Fall Time-Max (tf) 400 ns
Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 450μJ (on), 440μJ (off)
Td (on/off) @ 25°C 23ns/93ns
Current - Collector Pulsed (Icm) 22A
Turn Off Time-Nom (toff) 720 ns
Vce(on) (Max) @ Vge, Ic 4.3V @ 15V, 5A
Test Condition 960V, 5A, 50 Ω, 15V
Collector Emitter Saturation Voltage 3.17V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Max Collector Current 11A
Collector Emitter Voltage (VCEO) 4.3V
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Case Connection COLLECTOR
Element Configuration Single
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 60W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Last Time Buy
Operating Temperature -55°C~150°C TJ