IRG4BH20K-L
RoHS
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Package TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1200V 11A 60W TO262
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Technical Details
Physical
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Surface Mount NO
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2017
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature ULTRA FAST, LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Input Type Standard
Power - Max 60W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 11A
Power Dissipation-Max (Abs) 24W
Turn On Time 51 ns
Test Condition 960V, 5A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic 4.3V @ 15V, 5A
Turn Off Time-Nom (toff) 720 ns
Gate Charge 28nC
Current - Collector Pulsed (Icm) 22A
Td (on/off) @ 25°C 23ns/93ns
Switching Energy 450μJ (on), 440μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 400ns
Compliance
RoHS Status Non-RoHS Compliant
Alternative Model
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