Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 20V
Switching Energy 370μJ (on), 1.81mJ (off)
Td (on/off) @ 25°C 26ns/240ns
Current - Collector Pulsed (Icm) 196A
Turn Off Time-Nom (toff) 690 ns
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 27A
Test Condition 480V, 27A, 10 Ω, 15V
Collector Emitter Saturation Voltage 1.7V
Collector Emitter Breakdown Voltage 600V
Max Collector Current 49A
Collector Emitter Voltage (VCEO) 1.7V
Turn-Off Delay Time 240 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Dual
Max Power Dissipation 160W
Subcategory Insulated Gate BIP Transistors
Additional Feature FAST SWITCHING
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Last Time Buy
Operating Temperature -55°C~150°C TJ