IRG4BC30W-S
RoHS
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Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 23A 100W D2PAK
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Switching Energy 130μJ (on), 130μJ (off)
Td (on/off) @ 25°C 25ns/99ns
Current - Collector Pulsed (Icm) 92A
Gate Charge 51nC
Turn Off Time-Nom (toff) 300 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 12A
Test Condition 480V, 12A, 23 Ω, 15V
Turn On Time 41 ns
Current - Collector (Ic) (Max) 23A
Voltage - Collector Emitter Breakdown (Max) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 100W
Input Type Standard
Case Connection COLLECTOR
Configuration SINGLE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Base Part Number IRG4BC30W-S
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 225
Terminal Form GULL WING
Terminal Position SINGLE
Additional Feature LOW CONDUCTION LOSS
Terminal Finish Tin/Lead (Sn/Pb)
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e0
Published 1997
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Alternative Model
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