IRG4BC30U-STRRP
RoHS
/
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 23A 100W D2PAK
PDF
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Buying Options
Total Price: USD $2.04
Unit Price: USD $2.0425
≥1 USD $2.0425
≥10 USD $1.6758
≥100 USD $1.62355
≥500 USD $1.5713
≥1000 USD $1.5181
Inventory: 1112
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 260.39037mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish MATTE TIN OVER NICKEL
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 100W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number IRG4BC30U-SPBF
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 100W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 23A
Collector Emitter Breakdown Voltage 600V
Max Breakdown Voltage 600V
Turn On Time 33 ns
Test Condition 480V, 12A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 12A
Turn Off Time-Nom (toff) 320 ns
Gate Charge 50nC
Current - Collector Pulsed (Icm) 92A
Td (on/off) @ 25°C 17ns/78ns
Switching Energy 160μJ (on), 200μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 150ns
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Alternative Model
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