IRG4BC30U
RoHS
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Package TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 23A 100W TO220AB
PDF
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Buying Options
Total Price: USD $0.83
Unit Price: USD $0.8303
≥1 USD $0.8303
≥10 USD $0.68115
≥100 USD $0.66025
≥500 USD $0.6384
≥1000 USD $0.6175
Inventory: 1333
Minimum: 1
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Switching Energy 160μJ (on), 200μJ (off)
Td (on/off) @ 25°C 17ns/78ns
Current - Collector Pulsed (Icm) 92A
Gate Charge 50nC
Turn Off Time-Nom (toff) 320 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 12A
Test Condition 480V, 12A, 23 Ω, 15V
Turn On Time 33 ns
Current - Collector (Ic) (Max) 23A
Voltage - Collector Emitter Breakdown (Max) 600V
JEDEC-95 Code TO-220AB
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 100W
Input Type Standard
Case Connection COLLECTOR
Configuration SINGLE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Additional Feature ULTRA FAST SWITCHING
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2000
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-220-3
Mounting Type Through Hole
Alternative Model
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