IRG4BC30S-S
RoHS
/
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 34A 100W D2PAK
PDF
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Buying Options
Total Price: USD $2.72
Unit Price: USD $2.71985
≥1 USD $2.71985
≥10 USD $2.23155
≥100 USD $2.1622
≥500 USD $2.0919
≥1000 USD $2.02255
Inventory: 1187
Minimum: 1
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Fall Time-Max (tf) 590ns
Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 20V
Switching Energy 260μJ (on), 3.45mJ (off)
Td (on/off) @ 25°C 22ns/540ns
Current - Collector Pulsed (Icm) 68A
Gate Charge 50nC
Turn Off Time-Nom (toff) 1550 ns
Vce(on) (Max) @ Vge, Ic 1.6V @ 15V, 18A
Test Condition 480V, 18A, 23 Ω, 15V
Turn On Time 40 ns
Power Dissipation-Max (Abs) 100W
Current - Collector (Ic) (Max) 34A
Voltage - Collector Emitter Breakdown (Max) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 100W
Input Type Standard
Case Connection COLLECTOR
Configuration SINGLE
Number of Elements 1
JESD-30 Code R-PSSO-G2
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Terminal Form GULL WING
Terminal Position SINGLE
Subcategory Insulated Gate BIP Transistors
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Published 2000
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Alternative Model
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