IRG4BC30KPBF
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
INFINEON IRG4BC30KPBF IGBT Single Transistor, N-CH, 28 A, 2.88 V, 100 W, 600 V, TO-220AB, 3 PinsNew
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Buying Options
Total Price: USD $1.04
Unit Price: USD $1.0384
≥1 USD $1.0384
Inventory: 1286
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 14.6812mm
Length 10.5156mm
Height 15.24mm
Technical
Fall Time-Max (tf) 170 ns
Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 20V
Switching Energy 360μJ (on), 510μJ (off)
Td (on/off) @ 25°C 26ns/130ns
Current - Collector Pulsed (Icm) 58A
Gate Charge 67nC
Turn Off Time-Nom (toff) 380 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 16A
Test Condition 480V, 16A, 23 Ω, 15V
Turn On Time 54 ns
Collector Emitter Saturation Voltage 2.7V
Collector Emitter Breakdown Voltage 600V
JEDEC-95 Code TO-220AB
Max Collector Current 28A
Collector Emitter Voltage (VCEO) 2.7V
Polarity/Channel Type N-CHANNEL
Rise Time 28 ns
Transistor Application MOTOR CONTROL
Input Type Standard
Case Connection COLLECTOR
Power Dissipation 100W
Element Configuration Dual
Number of Elements 1
Current Rating 28A
Terminal Position SINGLE
Max Power Dissipation 100W
Voltage - Rated DC 600V
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2000
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 16 Weeks
Alternative Model
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