Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 20V
Switching Energy 600μJ (on), 580μJ (off)
Td (on/off) @ 25°C 60ns/160ns
Current - Collector Pulsed (Icm) 56A
Turn Off Time-Nom (toff) 370 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 16A
Test Condition 480V, 16A, 23 Ω, 15V
Max Breakdown Voltage 600V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 42 ns
Max Collector Current 28A
Collector Emitter Voltage (VCEO) 2.7V
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Case Connection COLLECTOR
Element Configuration Single
Base Part Number IRG4BC30KD-SPBF
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 100W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Last Time Buy
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ