IRG4BC30KD-STRR
RoHS
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Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 28A 100W D2PAK
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Fall Time-Max (tf) 120ns
Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 20V
Switching Energy 600μJ (on), 580μJ (off)
Td (on/off) @ 25°C 60ns/160ns
Current - Collector Pulsed (Icm) 58A
Gate Charge 67nC
Turn Off Time-Nom (toff) 370 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 16A
Test Condition 480V, 16A, 23 Ω, 15V
Turn On Time 100 ns
Power Dissipation-Max (Abs) 100W
Current - Collector (Ic) (Max) 28A
Voltage - Collector Emitter Breakdown (Max) 600V
Reverse Recovery Time 42ns
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Power - Max 100W
Input Type Standard
Case Connection COLLECTOR
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Terminal Form GULL WING
Terminal Position SINGLE
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Published 2000
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Alternative Model
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