IRG4BC30FPBF
RoHS
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Package TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 31A 100W TO220AB
PDF
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Buying Options
Total Price: USD $1.05
Unit Price: USD $1.0507
≥1 USD $1.0507
≥10 USD $0.8626
≥100 USD $0.836
≥500 USD $0.80845
≥1000 USD $0.78185
Inventory: 4101
Minimum: 1
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Technical Details
Technical
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Additional Feature FAST SPEED
Published 2000
Packaging Tube
Operating Temperature -55°C~150°C TJ
Fall Time-Max (tf) 270 ns
Switching Energy 230μJ (on), 1.18mJ (off)
Td (on/off) @ 25°C 21ns/200ns
Current - Collector Pulsed (Icm) 124A
Gate Charge 51nC
Turn Off Time-Nom (toff) 640 ns
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 17A
Test Condition 480V, 17A, 23 Ω, 15V
Turn On Time 36 ns
Collector Emitter Saturation Voltage 1.59V
Collector Emitter Breakdown Voltage 600V
JEDEC-95 Code TO-220AB
Max Collector Current 31A
Collector Emitter Voltage (VCEO) 1.8V
Turn-Off Delay Time 200 ns
Polarity/Channel Type N-CHANNEL
Rise Time 15 ns
Transistor Application POWER CONTROL
Turn On Delay Time 21 ns
Input Type Standard
Case Connection COLLECTOR
Power Dissipation 100W
Element Configuration Single
Number of Elements 1
Current Rating 31A
Max Power Dissipation 100W
Voltage - Rated DC 600V
Subcategory Insulated Gate BIP Transistors
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 16 Weeks
Compliance
Lead Free Contains Lead, Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 4.69mm
Length 10.54mm
Height 8.77mm
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