IRG4BC30FDSTRRP
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 31A 100W D2PAK
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Buying Options
Total Price: USD $4.05
Unit Price: USD $4.053957
≥1 USD $4.053957
≥10 USD $3.953229
≥100 USD $3.886514
Inventory: 12
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 20V
Switching Energy 630μJ (on), 1.39mJ (off)
Td (on/off) @ 25°C 42ns/230ns
Current - Collector Pulsed (Icm) 120A
Gate Charge 51nC
Turn Off Time-Nom (toff) 620 ns
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 17A
Test Condition 480V, 17A, 23 Ω, 15V
Turn On Time 69 ns
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 42 ns
Max Collector Current 31A
Collector Emitter Voltage (VCEO) 1.8V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 100W
Input Type Standard
Case Connection COLLECTOR
Element Configuration Single
Number of Elements 1
JESD-30 Code R-PSSO-G2
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Terminal Form GULL WING
Max Power Dissipation 100W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Last Time Buy
JESD-609 Code e3
Published 2004
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 260.39037mg
Number of Pins 3
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 13 Weeks
Alternative Model
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