IRG4BC30FDPBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 31A 100W TO220AB
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Buying Options
Total Price: USD $9.4
Unit Price: USD $9.3974
≥1 USD $9.3974
≥10 USD $7.7102
≥100 USD $7.46985
≥500 USD $7.22855
≥1000 USD $6.9882
Inventory: 1977
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 4.69mm
Length 10.54mm
Height 8.77mm
Technical
Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 20V
Switching Energy 630μJ (on), 1.39mJ (off)
Td (on/off) @ 25°C 42ns/230ns
Current - Collector Pulsed (Icm) 124A
Gate Charge 51nC
Turn Off Time-Nom (toff) 620 ns
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 17A
Test Condition 480V, 17A, 23 Ω, 15V
Turn On Time 69 ns
Collector Emitter Saturation Voltage 1.59V
Collector Emitter Breakdown Voltage 600V
JEDEC-95 Code TO-220AB
Reverse Recovery Time 42 ns
Max Collector Current 31A
Collector Emitter Voltage (VCEO) 1.8V
Turn-Off Delay Time 230 ns
Polarity/Channel Type N-CHANNEL
Rise Time 26 ns
Transistor Application POWER CONTROL
Turn On Delay Time 42 ns
Input Type Standard
Case Connection COLLECTOR
Power Dissipation 100W
Element Configuration Single
Number of Elements 1
Current Rating 31A
Max Power Dissipation 100W
Voltage - Rated DC 600V
Subcategory Insulated Gate BIP Transistors
ECCN Code EAR99
Termination Through Hole
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Last Time Buy
Published 1998
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 16 Weeks
Alternative Model
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