IRG4BC30FD1PBF
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 31A 100W TO220AB
PDF
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Buying Options
Total Price: USD $1.67
Unit Price: USD $1.672
≥1 USD $1.672
Inventory: 773
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 4.69mm
Length 10.54mm
Height 15.24mm
Technical
Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 20V
Switching Energy 370μJ (on), 1.42mJ (off)
Td (on/off) @ 25°C 22ns/250ns
Current - Collector Pulsed (Icm) 124A
Gate Charge 57nC
Turn Off Time-Nom (toff) 740 ns
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 17A
Test Condition 480V, 17A, 23 Ω, 15V
Turn On Time 46 ns
Collector Emitter Saturation Voltage 1.8V
Collector Emitter Breakdown Voltage 600V
JEDEC-95 Code TO-220AB
Reverse Recovery Time 46 ns
Max Collector Current 31A
Collector Emitter Voltage (VCEO) 1.8V
Polarity/Channel Type N-CHANNEL
Rise Time 24 ns
Transistor Application POWER CONTROL
Input Type Standard
Case Connection COLLECTOR
Power Dissipation 100W
Element Configuration Single
Number of Elements 1
Current Rating 31A
Max Power Dissipation 100W
Voltage - Rated DC 600V
Subcategory Insulated Gate BIP Transistors
ECCN Code EAR99
Termination Through Hole
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2000
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 16 Weeks
Alternative Model
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