IRG4BC30FD1
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 31A 100W TO220AB
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Switching Energy 370μJ (on), 1.42mJ (off)
Td (on/off) @ 25°C 22ns/250ns
Current - Collector Pulsed (Icm) 120A
Gate Charge 57nC
Turn Off Time-Nom (toff) 740 ns
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 17A
Test Condition 480V, 17A, 23 Ω, 15V
Turn On Time 46 ns
Current - Collector (Ic) (Max) 31A
Voltage - Collector Emitter Breakdown (Max) 600V
JEDEC-95 Code TO-220AB
Reverse Recovery Time 46ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 100W
Input Type Standard
Case Connection COLLECTOR
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2003
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-220-3
Mounting Type Through Hole
Alternative Model
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