IRG4BC20UPBF
RoHS
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Package TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
Tube Through Hole N-CHANNEL Single IGBT Transistor 2.1V @ 15V 6.5A 52A 60W 180ns
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Buying Options
Total Price: USD $5.05
Unit Price: USD $5.0502
≥1 USD $5.0502
≥10 USD $4.1439
≥100 USD $4.0147
≥500 USD $3.8855
≥1000 USD $3.75535
Inventory: 1139
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Additional Feature ULTRA FAST
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 60W
Current Rating 13A
Number of Elements 1
Element Configuration Single
Power Dissipation 60W
Input Type Standard
Turn On Delay Time 21 ns
Transistor Application POWER CONTROL
Rise Time 13ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 86 ns
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 13A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.1V
Input Capacitance 530pF
Turn On Time 34 ns
Test Condition 480V, 6.5A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 6.5A
Turn Off Time-Nom (toff) 330 ns
Gate Charge 27nC
Current - Collector Pulsed (Icm) 52A
Td (on/off) @ 25°C 21ns/86ns
Switching Energy 100μJ (on), 120μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 180ns
Dimensions
Height 16.51mm
Length 10.668mm
Width 4.826mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Contains Lead, Lead Free
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