IRG4BC20UDPBF
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 13A 60W TO220AB
PDF
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Buying Options
Total Price: USD $2.68
Unit Price: USD $2.6847
≥1 USD $2.6847
Inventory: 13
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2003
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 60W
Current Rating 13A
Number of Elements 1
Element Configuration Single
Power Dissipation 60W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 39 ns
Transistor Application POWER CONTROL
Rise Time 15 ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 93 ns
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 13A
Reverse Recovery Time 37 ns
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.1V
Turn On Time 55 ns
Test Condition 480V, 6.5A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 6.5A
Turn Off Time-Nom (toff) 320 ns
Gate Charge 27nC
Current - Collector Pulsed (Icm) 52A
Td (on/off) @ 25°C 39ns/93ns
Switching Energy 160μJ (on), 130μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 170 ns
Dimensions
Height 16.51mm
Length 10.668mm
Width 4.826mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
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