IRG4BC20SPBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 19A 60W TO220AB
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Buying Options
Total Price: USD $0.89
Unit Price: USD $0.88635
≥1 USD $0.88635
≥10 USD $0.7277
≥100 USD $0.7049
≥500 USD $0.6821
≥1000 USD $0.6593
Inventory: 1427
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 4.69mm
Length 10.54mm
Height 8.77mm
Technical
Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 20V
Switching Energy 120μJ (on), 2.05mJ (off)
Td (on/off) @ 25°C 27ns/540ns
Current - Collector Pulsed (Icm) 38A
Gate Charge 27nC
Turn Off Time-Nom (toff) 1540 ns
Vce(on) (Max) @ Vge, Ic 1.6V @ 15V, 10A
Test Condition 480V, 10A, 50 Ω, 15V
Turn On Time 38 ns
Collector Emitter Saturation Voltage 1.4V
Collector Emitter Breakdown Voltage 600V
JEDEC-95 Code TO-220AB
Max Collector Current 19A
Collector Emitter Voltage (VCEO) 1.6V
Turn-Off Delay Time 540 ns
Polarity/Channel Type N-CHANNEL
Rise Time 9.7 ns
Transistor Application POWER CONTROL
Turn On Delay Time 27 ns
Input Type Standard
Case Connection COLLECTOR
Power Dissipation 60W
Element Configuration Dual
Number of Elements 1
Current Rating 19A
Terminal Position SINGLE
Max Power Dissipation 60W
Voltage - Rated DC 600V
Subcategory Insulated Gate BIP Transistors
ECCN Code EAR99
Termination Through Hole
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Published 2000
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 16 Weeks
Alternative Model
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