IRG4BC20FPBF
RoHS
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Package TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 16A 60W TO220AB
PDF
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Buying Options
Total Price: USD $10.15
Unit Price: USD $10.152083
≥1 USD $10.152083
≥10 USD $9.57743
≥100 USD $9.035311
≥500 USD $8.523879
≥1000 USD $8.041395
Inventory: 8803
Minimum: 1
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Technical Details
Technical
Max Power Dissipation 60W
Terminal Position SINGLE
Current Rating 16A
Number of Elements 1
Element Configuration Dual
Power Dissipation 60W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 24 ns
Transistor Application POWER CONTROL
Rise Time 17 ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 190 ns
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 16A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.66V
Turn On Time 41 ns
Test Condition 480V, 9A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 9A
Turn Off Time-Nom (toff) 640 ns
Gate Charge 27nC
Current - Collector Pulsed (Icm) 64A
Td (on/off) @ 25°C 24ns/190ns
Switching Energy 70μJ (on), 600μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Voltage - Rated DC 600V
Subcategory Insulated Gate BIP Transistors
Additional Feature FAST SWITCHING
ECCN Code EAR99
Termination Through Hole
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 1997
Packaging Tube
Operating Temperature -55°C~150°C TJ
Dimensions
Height 15.24mm
Length 10.5156mm
Width 4.69mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Contains Lead, Lead Free
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 16 Weeks
Alternative Model
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