IRG4BC15UDPBF
RoHS
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Package TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 14A 49W TO220AB
PDF
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Buying Options
Total Price: USD $8.8
Unit Price: USD $8.8046
≥1 USD $8.8046
≥10 USD $7.22475
≥100 USD $6.99865
≥500 USD $6.77255
≥1000 USD $6.5474
Inventory: 1262
Minimum: 1
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Technical Details
Compliance
Lead Free Contains Lead, Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 4.699mm
Length 10.5156mm
Height 15.24mm
Technical
Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 20V
Switching Energy 240μJ (on), 260μJ (off)
Td (on/off) @ 25°C 17ns/160ns
Current - Collector Pulsed (Icm) 42A
Gate Charge 23nC
Turn Off Time-Nom (toff) 400 ns
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 7.8A
Test Condition 480V, 7.8A, 75 Ω, 15V
Turn On Time 37 ns
Collector Emitter Saturation Voltage 1.95V
Collector Emitter Breakdown Voltage 600V
JEDEC-95 Code TO-220AB
Reverse Recovery Time 28 ns
Max Collector Current 14A
Collector Emitter Voltage (VCEO) 2.4V
Turn-Off Delay Time 160 ns
Polarity/Channel Type N-CHANNEL
Rise Time 20 ns
Transistor Application POWER CONTROL
Turn On Delay Time 17 ns
Input Type Standard
Case Connection COLLECTOR
Power Dissipation 49W
Element Configuration Single
Number of Elements 1
Current Rating 14A
Max Power Dissipation 49W
Voltage - Rated DC 600V
Subcategory Insulated Gate BIP Transistors
Additional Feature ULTRA FAST SOFT RECOVERY
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2000
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 16 Weeks
Alternative Model
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