Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 49W
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Element Configuration Single
Case Connection COLLECTOR
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.4V
Max Collector Current 14A
Reverse Recovery Time 28 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.95V
Test Condition 480V, 7.8A, 75 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 7.8A
Turn Off Time-Nom (toff) 400 ns
Current - Collector Pulsed (Icm) 42A
Td (on/off) @ 25°C 17ns/160ns
Switching Energy 240μJ (on), 260μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V