Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 20V
Switching Energy 240μJ (on), 260μJ (off)
Td (on/off) @ 25°C 17ns/160ns
Current - Collector Pulsed (Icm) 42A
Turn Off Time-Nom (toff) 400 ns
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 7.8A
Test Condition 480V, 7.8A, 75 Ω, 15V
Collector Emitter Saturation Voltage 2.02V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 28 ns
Max Collector Current 14A
Collector Emitter Voltage (VCEO) 2.4V
Turn-Off Delay Time 160 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Element Configuration Single
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 49W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Last Time Buy
Operating Temperature -55°C~150°C TJ