IRG4BC10UDPBF
RoHS
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Package TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 8.5A 38W TO220AB
PDF
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Buying Options
Total Price: USD $2.68
Unit Price: USD $2.6847
≥1 USD $2.6847
≥10 USD $2.20305
≥100 USD $2.13465
≥500 USD $2.0653
≥1000 USD $1.9969
Inventory: 1167
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 4.69mm
Length 10.5156mm
Height 15.24mm
Technical
Fall Time-Max (tf) 210 ns
Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 20V
Switching Energy 140μJ (on), 120μJ (off)
Td (on/off) @ 25°C 40ns/87ns
Current - Collector Pulsed (Icm) 34A
Gate Charge 15nC
Turn Off Time-Nom (toff) 345 ns
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 5A
Test Condition 480V, 5A, 100 Ω, 15V
Turn On Time 56 ns
Collector Emitter Saturation Voltage 2.6V
Collector Emitter Breakdown Voltage 600V
JEDEC-95 Code TO-220AB
Reverse Recovery Time 28 ns
Max Collector Current 8.5A
Collector Emitter Voltage (VCEO) 2.6V
Turn-Off Delay Time 87 ns
Polarity/Channel Type N-CHANNEL
Rise Time 16 ns
Transistor Application POWER CONTROL
Turn On Delay Time 40 ns
Input Type Standard
Case Connection COLLECTOR
Power Dissipation 38W
Element Configuration Single
Number of Elements 1
Current Rating 8.5A
Max Power Dissipation 38W
Voltage - Rated DC 600V
Subcategory Insulated Gate BIP Transistors
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2000
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 6.000006g
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 16 Weeks
Alternative Model
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