IRG4BC10SD
RoHS
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Package TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 14A 38W TO220AB
PDF
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Buying Options
Total Price: USD $7.92
Unit Price: USD $7.92205
≥1 USD $7.92205
≥10 USD $6.50085
≥100 USD $6.29755
≥500 USD $6.09425
≥1000 USD $5.89095
Inventory: 1130
Minimum: 1
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Switching Energy 310μJ (on), 3.28mJ (off)
Td (on/off) @ 25°C 76ns/815ns
Current - Collector Pulsed (Icm) 18A
Gate Charge 15nC
Turn Off Time-Nom (toff) 1780 ns
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 8A
Test Condition 480V, 8A, 100 Ω, 15V
Turn On Time 106 ns
Current - Collector (Ic) (Max) 14A
Voltage - Collector Emitter Breakdown (Max) 600V
Reverse Recovery Time 28ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 38W
Input Type Standard
Case Connection COLLECTOR
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Terminal Form GULL WING
Terminal Position SINGLE
Additional Feature LOW CONDUCTION LOSS
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Published 2000
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case TO-220-3
Mounting Type Through Hole
Alternative Model
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