IRG4BC10KDPBF
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 9A 38W TO220AB
PDF
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Buying Options
Total Price: USD $0.94
Unit Price: USD $0.9405
≥1 USD $0.9405
≥10 USD $0.7714
≥100 USD $0.74765
≥500 USD $0.72295
≥1000 USD $0.6992
Inventory: 1183
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 38W
Current Rating 9A
Number of Elements 1
Element Configuration Single
Power Dissipation 38W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 46 ns
Transistor Application MOTOR CONTROL
Rise Time 32 ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 100 ns
Collector Emitter Voltage (VCEO) 2.62V
Max Collector Current 9A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.39V
Turn On Time 78 ns
Test Condition 480V, 5A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.62V @ 15V, 5A
Turn Off Time-Nom (toff) 410 ns
Gate Charge 19nC
Current - Collector Pulsed (Icm) 18A
Td (on/off) @ 25°C 49ns/97ns
Switching Energy 250μJ (on), 140μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Fall Time-Max (tf) 210 ns
Dimensions
Height 8.77mm
Length 10.5156mm
Width 4.69mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Contains Lead, Lead Free
Alternative Model
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