Operating Temperature -40°C~175°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 150W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number *KD10N60
Element Configuration Single
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 20A
Reverse Recovery Time 72 ns
Collector Emitter Breakdown Voltage 600V
Max Breakdown Voltage 600V
Test Condition 400V, 10A, 26 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 10A
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 30A
Td (on/off) @ 25°C 12ns/168ns
Switching Energy 190μJ (on), 160μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.7V