Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 12A
Reverse Recovery Time 48 ns
Collector Emitter Breakdown Voltage 600V
Max Breakdown Voltage 600V
Test Condition 400V, 6A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 6A
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 18A
Td (on/off) @ 25°C 7ns/106ns
Switching Energy 90μJ (on), 90μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.7V
Halogen Free Halogen Free
Element Configuration Single
Base Part Number *KD06N60
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 100W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -40°C~175°C TJ