IKD06N60RAATMA1
RoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 12A 100W TO252
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Switching Energy 110μJ (on), 220μJ (off)
Td (on/off) @ 25°C 12ns/127ns
Current - Collector Pulsed (Icm) 18A
Gate Charge 48nC
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 335 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 6A
Test Condition 400V, 6A, 23 Ω, 15V
Turn On Time 22 ns
Max Breakdown Voltage 600V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 68 ns
Max Collector Current 12A
Collector Emitter Voltage (VCEO) 2.1V
Polarity/Channel Type N-CHANNEL
Transistor Application GENERAL PURPOSE
Power - Max 100W
Input Type Standard
Case Connection COLLECTOR
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PSSO-G2
Reference Standard AEC-Q101
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Terminal Position SINGLE
Max Power Dissipation 100W
Additional Feature LOW CONDUCTION LOSS
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Pbfree Code yes
Series TrenchStop?
Published 2012
Packaging Tape & Reel (TR)
Operating Temperature -40°C~175°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 14 Weeks
Alternative Model
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