Gate-Emitter Thr Voltage-Max 4.8V
Gate-Emitter Voltage-Max 20V
Switching Energy 70μJ (on), 30μJ (off)
Td (on/off) @ 25°C 11ns/115ns
Current - Collector Pulsed (Icm) 24A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 8A
Test Condition 400V, 4A, 48 Ω, 15V
Collector Emitter Saturation Voltage 1.65V
Collector Emitter Breakdown Voltage 650V
Reverse Recovery Time 40 ns
Max Collector Current 10.8A
Collector Emitter Voltage (VCEO) 1.65V
Polarity/Channel Type N-CHANNEL
Halogen Free Halogen Free
Element Configuration Single
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 31.2W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -40°C~175°C TJ