Gate-Emitter Thr Voltage-Max 6.4V
Gate-Emitter Voltage-Max 20V
Td (on/off) @ 25°C -/511ns
Current - Collector Pulsed (Icm) 90A
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 640 ns
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 30A
Test Condition 600V, 30A, 15 Ω, 15V
Collector Emitter Saturation Voltage 1.7V
Collector Emitter Breakdown Voltage 900V
Max Collector Current 60A
Collector Emitter Voltage (VCEO) 900V
Polarity/Channel Type N-CHANNEL
Halogen Free Not Halogen Free
Case Connection COLLECTOR
Element Configuration Single
Max Power Dissipation 454W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -40°C~175°C TJ