IHW30N100R
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1000V 60A 412W TO247-3
PDF
/
Buying Options
Total Price: USD $3.08
Unit Price: USD $3.0818
≥1 USD $3.0818
≥10 USD $2.5289
≥100 USD $2.45005
≥500 USD $2.3712
≥1000 USD $2.2914
Inventory: 56743
Minimum: 1
-
+
Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
Gate-Emitter Thr Voltage-Max 6.4V
Gate-Emitter Voltage-Max 20V
Switching Energy 2.1mJ (off)
Td (on/off) @ 25°C -/846ns
Current - Collector Pulsed (Icm) 90A
Gate Charge 209nC
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 988.4 ns
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 30A
Test Condition 600V, 30A, 26 Ω, 15V
Collector Emitter Saturation Voltage 1.75V
Voltage - Collector Emitter Breakdown (Max) 1000V
Collector Emitter Breakdown Voltage 1kV
JEDEC-95 Code TO-247AC
Max Collector Current 60A
Collector Emitter Voltage (VCEO) 1kV
Polarity/Channel Type N-CHANNEL
Halogen Free Not Halogen Free
Input Type Standard
Case Connection COLLECTOR
Power Dissipation 412W
Element Configuration Single
Number of Elements 1
Pin Count 3
Max Power Dissipation 412W
Subcategory Insulated Gate BIP Transistors
Terminal Finish TIN
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Published 2008
Packaging Tube
Operating Temperature -40°C~175°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Surface Mount NO
Package / Case TO-247-3
Mounting Type Through Hole
Alternative Model
Recommended For You
IHW30N100R+price,IHW30N100R+datasheet,IHW30N100R+in stock,buy+IHW30N100R,finder+IHW30N100R,IHW30N100R+tutorials,IHW30N100R+download