IHW20N120R2
RoHS
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Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT Transistors REVERSE CONDUCT IGBT 1200V 20A
PDF
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Buying Options
Total Price: USD $1.11
Unit Price: USD $1.10675
≥1 USD $1.10675
≥10 USD $0.9082
≥100 USD $0.8797
≥500 USD $0.8512
≥1000 USD $0.8227
Inventory: 53354
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2008
Series TrenchStop?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 330W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 330W
Case Connection COLLECTOR
Input Type Standard
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 20A
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 40A
Collector Emitter Saturation Voltage 1.85V
Test Condition 600V, 20A, 15 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.75V @ 15V, 20A
Turn Off Time-Nom (toff) 526 ns
IGBT Type NPT, Trench Field Stop
Gate Charge 143nC
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C -/359ns
Switching Energy 1.2mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.4V
Compliance
RoHS Status RoHS Compliant
Alternative Model
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