IHW15N120R2
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT Transistors REVERSE CONDUCT IGBT 1200V 15A
PDF
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Buying Options
Total Price: USD $2.09
Unit Price: USD $2.0919
≥1 USD $2.0919
≥10 USD $1.71665
≥100 USD $1.66345
≥500 USD $1.6093
≥1000 USD $1.5561
Inventory: 89711
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
Gate-Emitter Thr Voltage-Max 6.4V
Gate-Emitter Voltage-Max 20V
Switching Energy 900μJ (off)
Td (on/off) @ 25°C -/282ns
Current - Collector Pulsed (Icm) 45A
Gate Charge 133nC
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 432 ns
Vce(on) (Max) @ Vge, Ic 1.75V @ 15V, 15A
Test Condition 600V, 15A, 14.8 Ω, 15V
Collector Emitter Saturation Voltage 1.8V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
JEDEC-95 Code TO-247AD
Max Collector Current 30A
Collector Emitter Voltage (VCEO) 1.2kV
Polarity/Channel Type N-CHANNEL
Input Type Standard
Case Connection COLLECTOR
Power Dissipation 357W
Element Configuration Single
Number of Elements 1
JESD-30 Code R-PSFM-T3
Pin Count 3
Max Power Dissipation 357W
Subcategory Insulated Gate BIP Transistors
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2006
Packaging Tube
Operating Temperature -40°C~175°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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