IHD10N60RA
RoHS
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Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 20A 110W TO252-3
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Technical Details
Physical
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series TrenchStop?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2
Terminal Finish MATTE TIN
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 110W
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 110W
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 20A
Collector Emitter Breakdown Voltage 600V
Test Condition 400V, 10A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 10A
Turn Off Time-Nom (toff) 355 ns
IGBT Type Trench
Gate Charge 62nC
Current - Collector Pulsed (Icm) 30A
Td (on/off) @ 25°C -/170ns
Switching Energy 270μJ
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.7V
Compliance
RoHS Status RoHS Compliant
Alternative Model
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