IHD06N60RA
RoHS
/
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 12A 88W TO252-3
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Gate-Emitter Thr Voltage-Max 5.7V
Gate-Emitter Voltage-Max 20V
Switching Energy 150μJ
Td (on/off) @ 25°C 25ns/125ns
Current - Collector Pulsed (Icm) 18A
Gate Charge 42nC
IGBT Type Trench
Turn Off Time-Nom (toff) 325 ns
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 6A
Test Condition 400V, 6A, 14.7 Ω, 15V
Collector Emitter Breakdown Voltage 600V
JEDEC-95 Code TO-252AA
Max Collector Current 12A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Halogen Free Not Halogen Free
Transistor Application POWER CONTROL
Power - Max 88W
Input Type Standard
Case Connection COLLECTOR
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 3
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Terminal Form GULL WING
Max Power Dissipation 88W
Subcategory Insulated Gate BIP Transistors
Terminal Finish MATTE TIN
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Series TrenchStop?
Published 2012
Packaging Tape & Reel (TR)
Operating Temperature -40°C~175°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Surface Mount YES
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Supply Chain
Factory Lead Time 17 Weeks
Alternative Model
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