Gate-Emitter Thr Voltage-Max 4.8V
Gate-Emitter Voltage-Max 20V
Switching Energy 360μJ (on), 100μJ (off)
Td (on/off) @ 25°C 19ns/160ns
Current - Collector Pulsed (Icm) 120A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 40A
Test Condition 400V, 20A, 15 Ω, 15V
Collector Emitter Saturation Voltage 1.6V
Collector Emitter Breakdown Voltage 650V
Max Collector Current 74A
Collector Emitter Voltage (VCEO) 1.6V
Polarity/Channel Type N-CHANNEL
Element Configuration Single
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 255W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -40°C~175°C TJ