AUIRGU4045D
RoHS 
RoHS compliant
RoHS compliantPackage TO-251-3 Short Leads, IPak, TO-251AA
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
DIODE 600V IGBT
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Technical Details
Technical
Switching Energy 56μJ (on), 122μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Fall Time-Max (tf) 22ns
Td (on/off) @ 25°C 27ns/75ns
Current - Collector Pulsed (Icm) 18A
Gate Charge 19.5nC
IGBT Type Trench
Turn Off Time-Nom (toff) 127 ns
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 6A
Test Condition 400V, 6A, 47 Ω, 15V
Turn On Time 38 ns
Power Dissipation-Max (Abs) 77W
Current - Collector (Ic) (Max) 12A
Voltage - Collector Emitter Breakdown (Max) 600V
Reverse Recovery Time 74ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 77W
Input Type Standard
Configuration SINGLE WITH BUILT-IN DIODE
Rise Time-Max 15ns
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSIP-T3
Time@Peak Reflow Temperature-Max (s) 30
Reach Compliance Code compliant
Peak Reflow Temperature (Cel) 260
Terminal Position SINGLE
Subcategory Insulated Gate BIP Transistors
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Published 2011
Packaging Tube
Operating Temperature -55°C~175°C TJ
Compliance
RoHS Status RoHS Compliant
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type Through Hole
Supply Chain
Factory Lead Time 13 Weeks
Alternative Model
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