Gate-Emitter Thr Voltage-Max 5.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 350μJ (on), 825μJ (off)
Td (on/off) @ 25°C 46ns/185ns
Current - Collector Pulsed (Icm) 120A
Turn Off Time-Nom (toff) 237 ns
Vce(on) (Max) @ Vge, Ic 2.35V @ 15V, 30A
Test Condition 400V, 30A, 10 Ω, 15V
Collector Emitter Saturation Voltage 2.35V
Collector Emitter Breakdown Voltage 600V
Max Collector Current 78A
Collector Emitter Voltage (VCEO) 2.35V
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Element Configuration Single
Max Power Dissipation 370W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ