Operating Temperature -55°C~175°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 750W
Element Configuration Single
Case Connection COLLECTOR
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 198 ns
Collector Emitter Voltage (VCEO) 2.05V
Max Collector Current 240A
Reverse Recovery Time 360 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.05V
Test Condition 400V, 120A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.05V @ 15V, 120A
Turn Off Time-Nom (toff) 281 ns
Current - Collector Pulsed (Icm) 360A
Td (on/off) @ 25°C 69ns/198ns
Switching Energy 8.2mJ (on), 2.9mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V