AUIRGP50B60PD1E
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 75A 390W TO247AD
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Buying Options
Total Price: USD $59.41
Unit Price: USD $59.41015
≥1 USD $59.41015
≥10 USD $48.74735
≥100 USD $47.22355
≥500 USD $45.7007
≥1000 USD $44.1769
Inventory: 25
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 25 Weeks
Physical
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Rise Time-Max 15ns
Configuration SINGLE WITH BUILT-IN DIODE
Input Type Standard
Power - Max 390W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Reverse Recovery Time 42ns
JEDEC-95 Code TO-247AD
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 75A
Power Dissipation-Max (Abs) 390W
Turn On Time 39 ns
Test Condition 390V, 33A, 3.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.85V @ 15V, 50A
Turn Off Time-Nom (toff) 161 ns
IGBT Type NPT
Gate Charge 205nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 30ns/130ns
Switching Energy 255μJ (on), 375μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Fall Time-Max (tf) 15ns
Compliance
RoHS Status RoHS Compliant
Alternative Model
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