Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 255μJ (on), 375μJ (off)
Td (on/off) @ 25°C 30ns/130ns
Current - Collector Pulsed (Icm) 150A
Turn Off Time-Nom (toff) 161 ns
Vce(on) (Max) @ Vge, Ic 2.85V @ 15V, 50A
Test Condition 390V, 33A, 3.3 Ω, 15V
Collector Emitter Saturation Voltage 2.35V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 42 ns
Max Collector Current 75A
Collector Emitter Voltage (VCEO) 2.85V
Turn-Off Delay Time 150 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Element Configuration Single
Max Power Dissipation 390W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ