Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 4.24mJ (on), 2.17mJ (off)
Td (on/off) @ 25°C 50ns/200ns
Current - Collector Pulsed (Icm) 225A
Turn Off Time-Nom (toff) 320 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 75A
Test Condition 400V, 75A, 10 Ω, 15V
Collector Emitter Saturation Voltage 1.7V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 240ns
Max Collector Current 140A
Collector Emitter Voltage (VCEO) 2.1V
Turn-Off Delay Time 200 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Max Power Dissipation 454W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ